Athermal annealing of Si-implanted GaAs and InP

GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a spot of ~2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ~4 J pulse energy for 35 ns in a vacuum chamber. As a result a crater is formed at the irradiated spot. The crater is surrounded by a dark-colored ring-shaped region which is annealed by mechanical energy generated by rapidly expanding hot plasma that formed on the exposed spot. The electrical characteristics of this annealed region are comparable to those of a halogen-lamp annealed sample. No redistribution of impurities due to transient diffusion is observed in the implant tail region. In x-ray diffraction measurements, a high angle side satellite peak due to lattice strain was observed in the crater and near crater regions of the athermally annealed sample in addition to the main Bragg peak that corresponds to the pristine sample. This high angle side satellite peak is not observed in regions away from the crater (≥5 mm from the center of the crater in GaAs)