Thermally induced phase transformation of Si-III/Si-XII zones formed by nanoindentation has been studied during low temperature (200<T<300 °C) thermal annealing by Raman microspectroscopy and transmission electron microscopy. Two sizes of spherical indenter tips have been used to create substantially different volumes of phase transformed zones in both crystalline (c-Si) and amorphous silicon (a-Si) to study the zone size and starting matrix effects. The overall transformation is from Si-III/XII to poly- or nanocrystalline Si-I through intermediate phases of Si-XIII and Si-IV. Attempts have been made to determine the exact transformation pathways. Two scenarios are possible: either Si-XII first transforms to Si-III before transforming to Si...
The effect of local hydrogen concentration on nanoindentation-inducedphase transformations has been ...
The kinetics of the phenomenon of pop-out during nanoindentation of silicon were studied by a variet...
Silicon has long been the most important material in semiconductor technology, having a huge impact ...
Transformation kinetics of nanoindented zones in silicon containing high pressure crystalline phases...
Phase transformations induced by indentation at different unloading rates have been studied in cryst...
Nanoindentation-induced formation of high pressure crystalline phases (Si-III and Si-XII) during unl...
nanoindentation, phase transformation, siliconNanoindentation-induced phase transformation in silico...
High temperature nanoindentation has been performed on pure ion-implanted amorphous silicon (unrelax...
The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical ...
Indentation at very low load rate showed region of constant volume with releasing load in crystallin...
The effect of the local oxygen concentration in ion-implanted amorphous Si (a-Si) on nanoindentation...
This letter investigates the structural changes in monocrystalline silicon caused by microindentatio...
The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are...
Novel phases of Si that are predicted to have industrially desirable properties can be recovered aft...
We demonstrate that nanoindents formed in amorphous Si films, with dimensions as small as ∼20 nm, pr...
The effect of local hydrogen concentration on nanoindentation-inducedphase transformations has been ...
The kinetics of the phenomenon of pop-out during nanoindentation of silicon were studied by a variet...
Silicon has long been the most important material in semiconductor technology, having a huge impact ...
Transformation kinetics of nanoindented zones in silicon containing high pressure crystalline phases...
Phase transformations induced by indentation at different unloading rates have been studied in cryst...
Nanoindentation-induced formation of high pressure crystalline phases (Si-III and Si-XII) during unl...
nanoindentation, phase transformation, siliconNanoindentation-induced phase transformation in silico...
High temperature nanoindentation has been performed on pure ion-implanted amorphous silicon (unrelax...
The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical ...
Indentation at very low load rate showed region of constant volume with releasing load in crystallin...
The effect of the local oxygen concentration in ion-implanted amorphous Si (a-Si) on nanoindentation...
This letter investigates the structural changes in monocrystalline silicon caused by microindentatio...
The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are...
Novel phases of Si that are predicted to have industrially desirable properties can be recovered aft...
We demonstrate that nanoindents formed in amorphous Si films, with dimensions as small as ∼20 nm, pr...
The effect of local hydrogen concentration on nanoindentation-inducedphase transformations has been ...
The kinetics of the phenomenon of pop-out during nanoindentation of silicon were studied by a variet...
Silicon has long been the most important material in semiconductor technology, having a huge impact ...