Resonant Inelastic Scattering in Dilue Magnetic Semiconductors by Soft-x-ray Fluorescence Spectroscopy

[[abstract]]Soft X-ray fluorescence (SXF) provides a means of measuring the element and angular momentum selective valence band density of states in complex materials. Recent studies have demonstrated that SXF excited near the absorption threshold generates an array of spectral features that depend on the nature of the material, particularly on the localization of excited states in s- and d-band solids. The current interest in dilute magnetic semiconductors (DMS) remains highly motivated by recent prospective applications, especially in optoelectronics. The Mn and S - L resonant X-ray emission spectra of Zn1−xMnxS (where 0:05 x 1) were measured as the energy of the exciting radiation was tuned across the S and Mn -L2;3 absorption edges of these compounds. Strong resonance peaks in Mn -L emission spectra and the systematic appearance of new spectral features in S -L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn -L2;3 absorption edges of these DMS is presented