[[abstract]]The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained
The effects of applied electric fields on donor and exciton states confined in GaAs-(Ga,Al)As quantu...
The binding energy of an exciton bound to an ionized donor impurity (D+,X) located st the center or ...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surro...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
Using a simple two-parameter wavefunction, we calculate variationally the binding energy of positive...
A method is developed to calculate exciton parameters in an arbitrarily shaped quantum well by using...
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum we...
In this study, the interband optical transitions and the binding energy of an exciton in a GaAs/Ga1-...
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells is c...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
We present variational calculations of the binding energy for positively and negatively charged exci...
Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bou...
The effects of applied electric fields on donor and exciton states confined in GaAs-(Ga,Al)As quantu...
The binding energy of an exciton bound to an ionized donor impurity (D+,X) located st the center or ...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surro...
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAl...
Using a simple two-parameter wavefunction, we calculate variationally the binding energy of positive...
A method is developed to calculate exciton parameters in an arbitrarily shaped quantum well by using...
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum we...
In this study, the interband optical transitions and the binding energy of an exciton in a GaAs/Ga1-...
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells is c...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
We present variational calculations of the binding energy for positively and negatively charged exci...
Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bou...
The effects of applied electric fields on donor and exciton states confined in GaAs-(Ga,Al)As quantu...
The binding energy of an exciton bound to an ionized donor impurity (D+,X) located st the center or ...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...