Effect of Last Barrier on the Optical Performance of Violet Light-emitting Diodes

[[abstract]]In this work, the optical performance of the violet InGaN light-emitting diodes with different last barrier thicknesses is investigated by using the APSYS simulation program. Specifically, the light output power, carrier concentrations in the quantum wells, recombination rates, and electron overflow are studied. The simulation results show that the optical properties of the violet InGaN light-emitting diode with a thinner last barrier are effectively improved, because the use of a thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. When more holes inject into the active region, the light-emitting diode is capable of reducing the leakage electrons from the active region to the p-side layers. Therefore, the radiative recombination and output power are enhanced accordingly when the thinner last barrier is utilized