[[abstract]]The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current
We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and d...
International audienceWe comparatively study the onset of photo-induced non-radiative intrinsic Auge...
The physical properties of InGaN-based light emitting diodes (LEDs) and laser diodes (LDs) are inves...
A simple experimental method of light emitting diode (LED) injection efficiency (IE) determination w...
We investigate theoretically the influence of type and density of background carriers in the active ...
Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate equation model....
In this work, theoretical investigation of the influence of Auger recombination coefficient and buil...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
In this paper, the self-consistent solution of Schrodinger-Poisson equations was realized to estimat...
We present a comprehensive model of the dependence of the internal quantum efficiency (IQE) on both ...
Abstract The physical mechanisms leading to the effi-ciency droop of InGaN/GaN light-emitting diodes...
Recent experimental investigations on the reduction of internal quantum efficiency with increasing c...
In this paper, the self-consistent solution of Schrodinger-Poisson equations was realized to estimat...
We present a comprehensive model of the dependence of the internal quantum efficiency (IQE) on both ...
[[abstract]]The physical mechanisms leading to the efficiency droop of InGaN/GaN light-emitting diod...
We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and d...
International audienceWe comparatively study the onset of photo-induced non-radiative intrinsic Auge...
The physical properties of InGaN-based light emitting diodes (LEDs) and laser diodes (LDs) are inves...
A simple experimental method of light emitting diode (LED) injection efficiency (IE) determination w...
We investigate theoretically the influence of type and density of background carriers in the active ...
Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate equation model....
In this work, theoretical investigation of the influence of Auger recombination coefficient and buil...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
In this paper, the self-consistent solution of Schrodinger-Poisson equations was realized to estimat...
We present a comprehensive model of the dependence of the internal quantum efficiency (IQE) on both ...
Abstract The physical mechanisms leading to the effi-ciency droop of InGaN/GaN light-emitting diodes...
Recent experimental investigations on the reduction of internal quantum efficiency with increasing c...
In this paper, the self-consistent solution of Schrodinger-Poisson equations was realized to estimat...
We present a comprehensive model of the dependence of the internal quantum efficiency (IQE) on both ...
[[abstract]]The physical mechanisms leading to the efficiency droop of InGaN/GaN light-emitting diod...
We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and d...
International audienceWe comparatively study the onset of photo-induced non-radiative intrinsic Auge...
The physical properties of InGaN-based light emitting diodes (LEDs) and laser diodes (LDs) are inves...