[[alternative]]CIGS thin film solar cell on Type SUS431

碩士機電工程學系[[abstract]]本論文採用磁控濺鍍法製備 CIGS 薄膜太陽電池於 SUS431 不銹鋼基板，以 SiOx 材料製作阻隔層，雙層結構鉬電極於背電極，搭配四元合金( Cu(In,Ga)Se2 )靶材製備前驅膜層，經過硒化退火熱處理，分析金屬基板雜質擴散對 CIGS 前驅膜層之影響。研究中利用輝光放電分光儀量測金屬基板化學成分，透過能量分散光譜儀量測薄膜元素成分含量，並藉以二次離子質譜儀進行薄膜縱深分佈分析，熱場發射掃瞄式電子顯微鏡和原子力顯微鏡觀察薄膜表面形貌及表面粗糙度，四點探針量測薄膜片電阻值並搭配 X 光繞射儀做薄膜結構性分析，而撓曲試驗測試薄膜對外應力之抵抗性。研究結果得知，當 SiOx 阻隔層為 300 nm 時，有較佳阻隔鐵、鉻、鎳等元素擴散效應與撓曲應力抵抗性。而鉬電極膜厚 700 nm，膜厚比例為 66 % 時，有較佳之片電阻值為0.16 ( Ω/□ )與基板撓曲之應力抵抗性。製備 CIGS 薄膜於不同基板條件下，經過硒化退火熱處理溫度 798 K 進行成相，均具有單一的黃銅礦( CIGS )相結構，薄膜具有(112)面的優選取向，其成分組成為( Cu：24, In：21, Ga：5, Se：50at.% )，且 Cu/(In+Ga)=0.92 和 Ga/(In+Ga)=0.19 較接近理想化學當量比。[[abstract]]In this thesis, Cu(In,Ga)Se2 (CIGS) thin film solar cells were prepared using SiOx material as barrier layer prior to the bi-layer Mo back electrode onto the SUS431 stainless steel substrate. And analyze the impurities of metal substrate diffusion effect on the CIGS absorber layers, of which CIGS precursor layers were fabricated from quaternary alloy target; sequentially, selenization process was employed to form CIGS chalcopyrite structure. In this study, the chemical composition of metal substrate was measured by glow discharge spectrometer (GDS). The stoichiometric ratio and depth profiles of the CIGS films were analyzed by energy dispersive spectrometer (EDS) and secondary ion mass spectrometer (SIMS), respectively. The surface morphology and surface roughness were observed by thermal field emission scanning electron microscope (FESEM) and atomic force microscope (AFM), respectively. The sheet resistance of films was measured by four point probe measurement. The structural analysis of thin films was analyzed by X-ray diffraction (XRD). And the repellency of thin films against the external stresses was examined by deflection test. The experimental results show that while the thickness of SiOx layer was 300 nm, it had the better repellency against the diffusion of Fe, Cr, and Ni elements and deflection stress. And while the thickness of Mo electrode was 700 nm with 66% thickness ratio, the film had better sheet resistance of 0.16 (Ω/□) and stress repellency against the deflection. And while CIGS thin films were prepared under conditions of different substrates with selenization annealing temperature of 798 K, all the films have the single chalcopyrite phase structure with (112) preferred orientation, and the composition of CIGS sample was approach to the ideal stoichiometry (Cu:24, In:21, Ga:5, Se:50 at.%), with Cu/(In+Ga) = 0.92, Ga/(In+Ga)=0.19