[[alternative]]The study use pulsed magnetron sputtering prepare ZnO︰Ga thin film and its surface texture

碩士機電工程學系[[abstract]]本研究主要目的在採用脈衝磁控濺鍍方式製備GZO(ZnO：Ga)，並利用化學濕式蝕刻對薄膜進行表面粗化，於不同蝕刻時間下觀察薄膜對可見光之漫透射率與電阻率之影響。首先，以脈衝磁控濺鍍於Corning1731玻璃基板上沉積GZO薄膜，並透過調變濺鍍功率、工作壓力、脈衝頻率、薄膜厚度和基板溫度等實驗參數來製備具最佳光電結構特性之GZO薄膜。其次，以三種不同蝕刻液體，調變蝕刻時間對GZO薄膜進行表面粗化使其具有陷光結構；探討薄膜蝕刻後對電性、可見光的穿透及散射之影響。研究中利用薄膜測厚儀量測其薄膜厚度及沈積率、能量分散光譜儀量測成分含量、霍爾量測儀四點探針量測電阻率、載子濃度和載子遷移率、X光繞射儀做薄膜結構性分析、熱場發射掃描式電子顯微鏡觀察薄膜表面形貌，利用光譜儀做光穿透率量測，並以可變角度多功能光學特性檢測系統做總透射率與鏡面透射率量測，藉此換算出漫透射率的光譜圖。研究結果顯示，於功率100W、工作距離5.5cm、工作壓力0.4Pa、頻率10kHz、脈衝反轉時間5μs，基板溫度473K之製程條件下，所製備之GZO薄膜具有最低電阻2.43×10-4Ωcm，穿透率74.03%。以0.5%HCl蝕刻GZO薄膜30秒後所得之粗化薄膜可見光總透射率為76.03%，霧度值為14.1%，可應用於太陽能電池前透明電極。[[abstract]]The purpose of this discourse was prepared GZO (ZnO:Ga) thin film by PMS(Pulse magnetron sputter), then we used chemical wet etching to observe the effect of transmittance and electrical properties. First, we used PMS to deposit GZO film on Corning 1737 glass substrate. The structural, electrical and optical properties as a function of sputtering power, working pressure, pulse frequency, thin film thickness and substrate temperature were investigated. Second, light trapping structure of thin films can be prepared by three kinds of etchant via varying etching time, then discussing the effect of electrical, light scattering and transmittance properties. In the experiment, film thickness and deposited rate were measured by a profilometer. The content of composition was measured by Energy dispersive spectrometer (EDS). Resistivity, carrier density and carrier mobility were measured by Hall effect measurement system. The analysis of crystallinity was measured by X-ray diffraction (XRD). Surface texture was observed by thermal field emission scanning electron microscope (TF-SEM). Transmittance was measured by spectrometer. Total transmittance and specular transmittance were measured by angle changeable optical characteristic measurement system. Result, The GZO film with the sputtering parameter as sputtering power 100W, working pressure 0.4Pa, pulse frequency 10kHz, pulse reverse time 5μs, substrate temperature 200℃ that showed a lowest resistivity of 2.43×10-4Ωcm. Using 0.5％HCl etched GZO thin film 30 seconds. We can get the average transmittance of visible region of 76.03%, and haze value 14.1% for front electrode application of thin film solar cells