[[alternative]]Effect of etching conditions on the thin film transistor with microcrystalline silicon active layer.

碩士機電工程學系[[abstract]]本論文主要是針對薄膜電晶體通道層中的微晶矽薄膜性質來進行探討。利用電漿蝕刻的物理變化，來觀察微晶矽薄膜表面變化，與對電晶體特性的影響。由於蝕刻完成之後，微晶矽所剩餘的厚度與表面粗糙度會影響到電晶體的電性好壞，故蝕刻速率的時間控制變得十分的重要。若以做為日後業界量產的機台而言，當機台的玻璃尺寸愈大，蝕刻完後的薄膜均勻度與量產速度亦為考慮的重點，故各項蝕刻參數的設定上便顯得格外的重要。 本研究以電漿蝕刻系統（Plasma Etch, PE）來做為蝕刻的主要機台。並利用PECVD 以SiH4/H2氣體流量比為100:1沈積而成的微晶矽薄膜，於320x400mm的TFT級用玻璃上來做為此次實驗的樣本，籍由改變機台的蝕刻參數，如SF6的氣體流量、射頻功率的大小、腔體壓力、蝕刻時間等製程參數，分別對樣本來進行蝕刻的動作，並透過掃描式電子顯微鏡、原子力顯微鏡等儀器，來分析這些參數對微晶矽蝕刻均一性、表面粗糙度及蝕刻速率的影響。並以較佳的蝕刻參數製成實體的電晶體模型，進行電性量測來觀察轉移特性曲線與輸出特性曲線的變化，進行相關的探討。[[abstract]]The subject of paper is in connection with microcrystalline characteristic of thin film transistor. The author operates plasma etching’s physical changing and to survey the face changing of microcrystalline characteristic in addition to survey that it takes an influence to thin film transistor. After etching, microcrystalline’s thickness and the roughness of microcrystalline’s face will be influence the electrical characteristic ability. The most important of all is to operate the time of etching rate. It will be to make use of machines for manufacture. If the glasses of machines more big the uniformity and rate of quantity reproduce have greater important. Formed into a sum, the etching parameter import to manufacture. The research used the microcrystalline characteristic which made with plasma etch and PECVD for SiH4/H2 gas flow rate 100:1 The matter which subsides to the bottom of 320x400mm TFT degree glasses. The author operates Etching rate . For example, SF6 gas flow rate、RF power、pressure、time. Let each sample respectively perform their duty. Not as long as, the author through scanning electronic microscope and atomic force microscope to analyze uniformity、the roughness of face and etching rate of microcrystalline characteristic. The author takes the best parameter to make thin film transistor modal and to survey Id-Vg Current and Id-Vd Curve that were through electrical characteristic test