We present a Silicon-on-Insulator based Look-up Table and configuration memory for application within a radiation hard reconfigurable system. The configuration storage includes a non-volatile EEPROM built using a standard single polysilicon Silicon on Insulator CMOS process linked to a Schmitt sense amplifier and transmission gate LUT structure. A simple current detector of the type used in conventional RAM circuits allows the configuration memory to be set up to exhibit self correcting, or "autoscrubbing" behavior. While the SOI EEPROM and Schmitt exhibit high intrinsic resistance to radiation induced errors, it is still possible for a sequence of two particle strikes to cause the configuration value to be lost. We undertake a pr...
As one of the most important components in the embedded systems, the SRAM are sensitive to radiation...
The constantly increasing memory density and performance of recent Field Programmable Gate Arrays (F...
We investigated the heavy ion single-event effect (SEE) susceptibility of the industrys first stand-...
We present a Silicon-on-Insulator based circuit for use as configuration storage in a radiation hard...
We describe and analyze a non-volatile configuration memory system with high resistance to radiation...
Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insul...
In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utiliz...
Once entirely the domain of space-borne applications, the effects of high energy charged particles ...
The usage of static random access memory-based field programmable gate arrays (FPGAs) on high-energy...
Heavy charged particle induced soft errors in semiconductor memory devices have been a field failure...
Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device op...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
The total ionizing dose (TID) effects on single-event upset (SEU) hardness are investigated for two ...
Static RAM-based field programmable gate arrays (SRAM-based FPGAs) are widely adopted in t...
Static RAM modules are widely adopted in high performance systems. Single Event Effects (SEEs) resil...
As one of the most important components in the embedded systems, the SRAM are sensitive to radiation...
The constantly increasing memory density and performance of recent Field Programmable Gate Arrays (F...
We investigated the heavy ion single-event effect (SEE) susceptibility of the industrys first stand-...
We present a Silicon-on-Insulator based circuit for use as configuration storage in a radiation hard...
We describe and analyze a non-volatile configuration memory system with high resistance to radiation...
Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insul...
In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utiliz...
Once entirely the domain of space-borne applications, the effects of high energy charged particles ...
The usage of static random access memory-based field programmable gate arrays (FPGAs) on high-energy...
Heavy charged particle induced soft errors in semiconductor memory devices have been a field failure...
Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device op...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
The total ionizing dose (TID) effects on single-event upset (SEU) hardness are investigated for two ...
Static RAM-based field programmable gate arrays (SRAM-based FPGAs) are widely adopted in t...
Static RAM modules are widely adopted in high performance systems. Single Event Effects (SEEs) resil...
As one of the most important components in the embedded systems, the SRAM are sensitive to radiation...
The constantly increasing memory density and performance of recent Field Programmable Gate Arrays (F...
We investigated the heavy ion single-event effect (SEE) susceptibility of the industrys first stand-...