A number of key sensor and active silicon-on-insulator (SOI) component designs benefit dramatically from TM mode operation due to strong evanescent field. Ultra-tight vertical confinement, shallow ridge waveguides [1] can provide such evanescent behaviour, but TM modes exhibit inherent severe lateral radiation leakage losses [2].We have recently shown that these inherent losses can be effectively mitigated by precision control of the waveguide widths to 'magic widths' where radiation loss components cancel coherently [3]. However, for these waveguides to be incorporated into practical functional integrated devices, they must be configured into fundamental building blocks. Disk or ring resonators are essential for compact and effic...
This letter describes the design, fabrication and characterization of high-Q oval resonators based o...
This letter describes the design, fabrication and characterization of high-Q oval resonators based o...
We experimentally demonstrate silicon ring resonators with internal quality factors ofQ0 2.2 × 107,...
The lateral leakage loss mechanism of the TM-like mode in thin-ridge SOI ring resonators is signific...
We present the first prediction of lateral leakage behavior of the TM-like mode in thin-ridge SOI cu...
The leakage loss due to TM-TE mode coupling of TM-like whispering gallery mode in silicon-on-insulat...
We show that recently-demonstrated "magic width" designs to mitigate TM-like mode radiatio...
In this paper, we investigate athermal and low propagation loss silicon-on-insulator (SOI) rib waveg...
In this paper, we investigate athermal and low propagation loss silicon-on-insulator (SOI) rib waveg...
We provide an experimental demonstration of the width dependent losses of the fundamental TM guided ...
Abstract—We report the first experimental observation in the optical domain of a dramatic width-depe...
We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values...
Microring resonators on SOI are investigated for both orthogonal polarizations. By demonstrating low...
Microring resonators on SOI are investigated for both orthogonal polarizations. By demonstrating low...
We illustrate that SOI ridge waveguide width control can modulate TM mode losses from below 1dB/cm t...
This letter describes the design, fabrication and characterization of high-Q oval resonators based o...
This letter describes the design, fabrication and characterization of high-Q oval resonators based o...
We experimentally demonstrate silicon ring resonators with internal quality factors ofQ0 2.2 × 107,...
The lateral leakage loss mechanism of the TM-like mode in thin-ridge SOI ring resonators is signific...
We present the first prediction of lateral leakage behavior of the TM-like mode in thin-ridge SOI cu...
The leakage loss due to TM-TE mode coupling of TM-like whispering gallery mode in silicon-on-insulat...
We show that recently-demonstrated "magic width" designs to mitigate TM-like mode radiatio...
In this paper, we investigate athermal and low propagation loss silicon-on-insulator (SOI) rib waveg...
In this paper, we investigate athermal and low propagation loss silicon-on-insulator (SOI) rib waveg...
We provide an experimental demonstration of the width dependent losses of the fundamental TM guided ...
Abstract—We report the first experimental observation in the optical domain of a dramatic width-depe...
We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values...
Microring resonators on SOI are investigated for both orthogonal polarizations. By demonstrating low...
Microring resonators on SOI are investigated for both orthogonal polarizations. By demonstrating low...
We illustrate that SOI ridge waveguide width control can modulate TM mode losses from below 1dB/cm t...
This letter describes the design, fabrication and characterization of high-Q oval resonators based o...
This letter describes the design, fabrication and characterization of high-Q oval resonators based o...
We experimentally demonstrate silicon ring resonators with internal quality factors ofQ0 2.2 × 107,...