Interfacial resistive properties of multi-layered silicon-based ohmic contacts

This article reports on the characterization of two- and three-layer ohmic contacts comprising of titanium disilicide and nickel silicide. Cross Kelvin resistor test structures were used to extract the specific contact resistivity (SCR) values for the different ohmic contacts fabricated. The SCR of aluminum to titanium silicide (Al-TiSi2) ohmic contacts was evaluated to be as low as 6.0 x 10-10 Ocm2. Three-layer ohmic contacts were created using aluminum and nickel silicide thin films and doped silicon. SCR values as low as 5.0 x 10-9 Ocm2 to antimony-doped silicon and 3.5 x 10-9 Ocm2 to boron-doped silicon were evaluated