In this paper, a novel metal-reactive insulator-silicon carbide device with a catalytic layer for hydrocarbon gas-sensing is presented. This structure, employed as a Schottky diode, utilizes sol-gel prepared Ga<sub>2</sub>O<sub>3</sub>-ZnO layer as the reactive insulator. The sensor has been exposed to propene gas, which lowers the barrier height of the diode. The responses were stable and repeatable at operating temperatures between 300 and 600°C. The response to propene in different ambients was examined. The effect of diode bias has been investigated by analyzing the sensors response to various propene concentrations when held at constant currents of 2 and 8 mA
We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure fo...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
This paper presents the propene gas sensing performance of Pt/Ga<sub>2</sub>O<sub>...
Silicon carbide based metal-oxide-semiconductor (MOS) devices are attractive for gas sensing in hars...
Pt/Ga2O3/SiC metal-reactive insulator-silicon carbide (MRISiC) devices operated as Schottky diodes w...
Silicon carbide based Schottky diode gas sensors are being developed for high temperature applicatio...
Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety a...
A nanostructured Schottky diode was fabricated to sense hydrogen and propene gases in the concentrat...
A nanostructured Schottky diode was fabricated to sense hydrogen and propene gases in the concentrat...
The growing need for reliable, efficient, high temperature hydrogen and hydrocarbon monitoring has f...
Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at...
Pt/WO3/SiC devices based Schottky diodes have been fabricated and their hydrogen and hydrocarbon gas...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
Silicon carbide based Schottky diode gas sensors are being developed for applications such as emissi...
We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure fo...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
This paper presents the propene gas sensing performance of Pt/Ga<sub>2</sub>O<sub>...
Silicon carbide based metal-oxide-semiconductor (MOS) devices are attractive for gas sensing in hars...
Pt/Ga2O3/SiC metal-reactive insulator-silicon carbide (MRISiC) devices operated as Schottky diodes w...
Silicon carbide based Schottky diode gas sensors are being developed for high temperature applicatio...
Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety a...
A nanostructured Schottky diode was fabricated to sense hydrogen and propene gases in the concentrat...
A nanostructured Schottky diode was fabricated to sense hydrogen and propene gases in the concentrat...
The growing need for reliable, efficient, high temperature hydrogen and hydrocarbon monitoring has f...
Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at...
Pt/WO3/SiC devices based Schottky diodes have been fabricated and their hydrogen and hydrocarbon gas...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
Silicon carbide based Schottky diode gas sensors are being developed for applications such as emissi...
We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure fo...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...