Advancements in nanotechnology have created the need for efficient means of communication of electrical signals to nanostructures, which can be addressed using low resistance contacts. In order to study and estimate the resistance of such contacts or the resistance posed by the interface(s) in such contacts, accurate test structures and evaluation techniques need to be used. The resistance posed by an interface is quantified using its specific contact resistivity (SCR), and although multiple techniques have been utilized, inaccuracies of such techniques in measuring values of SCR lesser than ( < 10-8 Ω ldr cm2 ) have been reported. In this letter, an approach for estimating very low values of SCR (lower than the previously limiting ( <...
Various test structures have been employed to determine the specific contact resistivity (rhoc) of o...
We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3...
Abstract—The parasitic factors that strongly influence the mea-surement accuracy of Cross-Bridge Kel...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...
Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...
Abstract — We propose and demonstrate a novel test struc-ture to characterize the electrical propert...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resist...
Metal to semiconductor contacts can be divided into two groups: rectifying contacts and non-rectifyi...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semico...
The parasitic factors that strongly influence the measurement accuracy of cross-bridge Kelvin resist...
Electrical contacts to devices which pose low resistance continue to be of interest as the dimension...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
Various test structures have been employed to determine the specific contact resistivity (rhoc) of o...
We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3...
Abstract—The parasitic factors that strongly influence the mea-surement accuracy of Cross-Bridge Kel...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...
Improved means of electrical access to nanotechnology devices and accurate nanoscale characterizatio...
Abstract — We propose and demonstrate a novel test struc-ture to characterize the electrical propert...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resist...
Metal to semiconductor contacts can be divided into two groups: rectifying contacts and non-rectifyi...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semico...
The parasitic factors that strongly influence the measurement accuracy of cross-bridge Kelvin resist...
Electrical contacts to devices which pose low resistance continue to be of interest as the dimension...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
Various test structures have been employed to determine the specific contact resistivity (rhoc) of o...
We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3...
Abstract—The parasitic factors that strongly influence the mea-surement accuracy of Cross-Bridge Kel...