Add to ORKG<正> A new technique know as“MOS Constant Current Quasi-static Small-Signsl Technique”by whichquasi-static capacitance,high frequency capacitance,and semiconductor surface potential of a MOS capaci-tor can be measured simultaneously is proposed.The low interface states densities and its distribution ...02112-11
A method is presented which allows the separate characterization of the two interfaces in the SOI MO...
We have made a comparative study between different charge pumping techniques (standard, three-level...
Contactless capacitance transient techniques have been applied to local mapping of interface traps o...
International audienceThis paper presents a detailed investigation of the quasi-static capacitance-v...
The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results...
The frequency spectrum of reciprocal capacitance and its derivative in an MOS-C have been discussed ...
session posterInternational audienceWe investigate for the first time the quasi-static capacitance t...
The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phe...
The four types of charges currently encountered in the Si-SiO sub 2 structure are first re-defined a...
A flexible low frequency measurement system was set up for providing high quality low frequency C-V ...
the interface states have a very significant role in the components containing MOS structures. In th...
In this paper the quasistatic (QS) and high frequency (HF) capacitance voltage (CV) method are appli...
MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wa...
Attention is called to the advantage of using variations of complex capacitance with frequency in st...
This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitan...
A method is presented which allows the separate characterization of the two interfaces in the SOI MO...
We have made a comparative study between different charge pumping techniques (standard, three-level...
Contactless capacitance transient techniques have been applied to local mapping of interface traps o...
International audienceThis paper presents a detailed investigation of the quasi-static capacitance-v...
The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results...
The frequency spectrum of reciprocal capacitance and its derivative in an MOS-C have been discussed ...
session posterInternational audienceWe investigate for the first time the quasi-static capacitance t...
The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phe...
The four types of charges currently encountered in the Si-SiO sub 2 structure are first re-defined a...
A flexible low frequency measurement system was set up for providing high quality low frequency C-V ...
the interface states have a very significant role in the components containing MOS structures. In th...
In this paper the quasistatic (QS) and high frequency (HF) capacitance voltage (CV) method are appli...
MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wa...
Attention is called to the advantage of using variations of complex capacitance with frequency in st...
This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitan...
A method is presented which allows the separate characterization of the two interfaces in the SOI MO...
We have made a comparative study between different charge pumping techniques (standard, three-level...
Contactless capacitance transient techniques have been applied to local mapping of interface traps o...