Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

The exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells (MQWs) is studied by deep-ultraviolet time-integrated and time-resolved photoluminescence (PL). Up to four longitudinal-optical (LO) phonon replicas of exciton recombination are observed, indicating the strong coupling of excitons with LO phonons in the MQWs. Moreover, the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor, and it keeps almost constant in a temperature range from 10 K to 120 K. This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction.National Basic Research Program of China [2012CB619306]; Beijing Science and Technology Project, China [Z151100003315024]; National Natural Science Foundation of China [61404132]SCI(E)EI中国科技核心期刊(ISTIC)ARTICLEpengjin@semi.ac.cn82