Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate
- Cui, Fangfang
- Wang, Cong
- Li, Xiaobo
- Wang, Gang
- Liu, Kaiqiang
- Yang, Zhou
- Feng, Qingliang
- Liang, Xing
- Zhang, Zhongyue
- Liu, Shengzhong
- Lei, Zhibin
- Liu, Zonghuai
- Xu, Hua
- Zhang, Jin
Publication date
January 2016
DOI Publisher
ADVANCED MATERIALS ISSN
0935-9648 Journal
issn:1521-4095 Citation count (estimate)
31Abstract
Anisotropic 2D layered material rhenium disulfi de (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 degrees C) and sulfur precursors in the temperature range of 460-900 degrees C with high efficiency.National Natural Science Foundation of China [51222201]; fundamental Research Funds for the Central Universities [GK201502003]SCI(E)EIPubMedARTICLExuhua-nano@snnu.edu.cn; jinzhang@pku.edu.cn255019-50242
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