Measurements of the spin-orbit interaction and Lande g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

We demonstrate direct measurements of the spin-orbit interaction and Lande g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Delta(ST) similar to 2.3meV, a strong spin-orbit interaction of Delta(SO) similar to 140 mu eV, and a large and strongly level-dependent Lande g factor of similar to 12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies. Published by AIP Publishing.Ministry of Science and Technology of China (MOST) [2012CB932700, 2012CB932703]; National Natural Science Foundation of China [91221202, 91421303, 11274021, 61504133, 61321001]; Specialized Research Fund for the Doctoral Program of Higher Education of China [20120001120127]; Swedish Research Council (VR)SCI(E)EIARTICLEsyhuang@pku.edu.cn; hqxu@pku.edu.cn510