In this paper,the impacts of device short-channel effects(SCEs) on the random threshold voltage(V TH) variation in nanoscale bulk MOSFETs are investigated.Firstly,the direct relationship between SCEs and random variations are examined.By adopting the electrostatic integrity(EI) as the index for SCEs,clear correlations of device SCEs with random V TH variations are observed,which indicate that the random variations can be reduced by simply improving the SCEs in MOS devices with the same channel doping.In add06153-15
A three-dimensional (3-D) 'atomistic' simulation study of random dopant induced threshold voltage lo...
This paper presents a comparative study on the effect of statistical dopant fluctuations on threshol...
We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET i...
In this paper we present an analysis of the impact of channel compositional variations on the total ...
[[abstract]]The analytical dependences of the short-channel effect on the channel and source/drain d...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is ma...
Clarification of robustness for threshold voltage (Δth) variation in FinFETs is very important. Vth ...
The 'nominally' un-doped or lightly-doped channels are actually doped considerably due to ...
Abstract—This letter investigates the impacts of random dopant fluctuation (RDF) and line edge rough...
The growing variability of electrical characteristics is a major issue associated with continuous do...
tatistical variability and reliability is a critical issue in conventional bulk planar MOSFETs of th...
We investigate the statistical variability of the threshold voltage and its sensitivity to critical ...
Abstract:- As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major ...
In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension ra...
A three-dimensional (3-D) 'atomistic' simulation study of random dopant induced threshold voltage lo...
This paper presents a comparative study on the effect of statistical dopant fluctuations on threshol...
We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET i...
In this paper we present an analysis of the impact of channel compositional variations on the total ...
[[abstract]]The analytical dependences of the short-channel effect on the channel and source/drain d...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is ma...
Clarification of robustness for threshold voltage (Δth) variation in FinFETs is very important. Vth ...
The 'nominally' un-doped or lightly-doped channels are actually doped considerably due to ...
Abstract—This letter investigates the impacts of random dopant fluctuation (RDF) and line edge rough...
The growing variability of electrical characteristics is a major issue associated with continuous do...
tatistical variability and reliability is a critical issue in conventional bulk planar MOSFETs of th...
We investigate the statistical variability of the threshold voltage and its sensitivity to critical ...
Abstract:- As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major ...
In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension ra...
A three-dimensional (3-D) 'atomistic' simulation study of random dopant induced threshold voltage lo...
This paper presents a comparative study on the effect of statistical dopant fluctuations on threshol...
We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET i...