The influence of nitrogen implantation on the electrical properties of amorphous IGZO

In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence can decrease the carrier concentration of a-IGZO by three orders to 10(16) cm(-3), which attributes to the reduction of oxygen defects. The addition of nitrogen atoms can result in the increase of Hall mobility to 9.93 cm(2)/V s with the subsequent decrease to 6.49 cm(2)/V s, which reflects the reduction of the average potential barrier height (phi(0)) to be 22.0 meV with subsequent increase to 74.8 meV in the modified percolation model. The results indicate that nitrogen can serve as an effective p-type dopants and oxygen defect suppressors. N-implantation with an appropriate fluence can effectively improve the Hall mobility and reduce the carrier concentration simultaneously. (C) 2017 Elsevier B.V. All rights reserved.Beijing Natural Science Foundation [3162016]; Key Lab of Materials Processing Technology; Ministry of Education, China; State Key Lab of New Ceramics and Fine Processing, ChinaCPCI-S(ISTP)596-59940