Simulation study of intrinsic parameter fluctuations in variable-body-factor silicon-on-thin-box metal oxide semiconductor field effect transistors

The effects of intrinsic parameter fluctuations, including line-edge-roughness (LER), silicon-body thickness variation (STV) and work-function variation (WFV), in 20-nm-gate variable-?? silicon-on-thin-box (SOTB) metal oxide semiconductor field effect transistors (MOSFETs) have been investigated and compared with those of the conventional SOTB. Results show that the variable-?? SOTB offers not only an enhanced Ion but also a reduced Ion fluctuation with a small increase in the active-state Ioff fluctuation. The V th-roll-off value in the variable-?? SOTB can be reduced by adopting a reverse-biased side gate to optimize the short channel effect, but the variability of the DIBL effect is enlarged. It is expected that a thinner silicon body can be used to reduce the dominant variability sources. ? 2011 The Japan Society of Applied Physics.EI4 PART 25