Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

We have fabricated fully transparent Al-doped ZnO thin-film transistors (AZO TFTs) on a flexible plastic substrate at room temperature. A doublestacked channel structure composed of a high-density layer and a low-density layer is also investigated to improve the device performance. Asfabricated TFTs exhibit excellent electrical performance as well as optical performance, with a saturation mobility of 31.4 cm2 V-1s-1, a drain current on/off ratio of about 108, a subthreshold swing of 330 mV/dec, and an average transmittance in the visible wavelength range of above 70%. ? 2013 The Japan Society of Applied Physics.EI4 PART 25