Epitaxial Growth of Single Crystal and Twin Superlattice InAs Nanowires by Chemical Vapor Deposition

Semiconductor In As nanowires have been widely explored, because In As is a direct bandgap semiconductor with a small bandgap, a small effective electron mass and a high room-temperature electron mobility [1]. However, twin defects, stacking faults, and zincblende-wurtzite polytypism are commonly fo...Semiconductor In As nanowires have been widely explored, because In As is a direct bandgap semiconductor with a small bandgap, a small effective electron mass and a high room-temperature electron mobility [1]. However, twin defects, stacking faults, and zincblende-wurtzite polytypism are commonly fo...国家纳米科学中心