Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias

In this paper,the recovery characteristics of negative bias temperature instability(NBTI) of pMOSFETs under drain bias were studied.It is observed that,the drain bias not only worsens the NBTI degradation in high |V_(ds)| region but also suppresses the recovery ratio of NBTI.The time evolutions o...In this paper,the recovery characteristics of negative bias temperature instability(NBTI) of pMOSFETs under drain bias were studied.It is observed that,the drain bias not only worsens the NBTI degradation in high |V_(ds)| region but also suppresses the recovery ratio of NBTI.The time evolutions o...IEEE Beijing Section、Chinese Institute of Electronics (CIE)