Add to ORKGPhotoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect (QCE...中国科技核心期刊(ISTIC)09621-62
Silicon nanocrystals were prepared by Si+-ion implantation and subsequent annealing of SiO2 films t...
The information of band structure of silicon nanocrystal (nc-Si) embedded in SiO 2 thin films synthe...
AbstractWe present results on the light emission of Si nanocrystals embedded into a SiO2 matrix obta...
Photoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation ont...
Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO 2 mat...
Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO2 matr...
Abstract. A possible mechanism for the photoemission from Si nanocrystals in an amorphous SiO2 matri...
A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-r...
A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion imp...
A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion imp...
The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Phot...
In this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implan...
In this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implan...
In this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implan...
Si nanoclusters were formed by Si-28 ion implantation into SiO2 matrix and subsequently annealed at ...
Silicon nanocrystals were prepared by Si+-ion implantation and subsequent annealing of SiO2 films t...
The information of band structure of silicon nanocrystal (nc-Si) embedded in SiO 2 thin films synthe...
AbstractWe present results on the light emission of Si nanocrystals embedded into a SiO2 matrix obta...
Photoluminescence (PL) spectra of Si nanocrystals (NCs) prepared by 130 keV Si ions implantation ont...
Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO 2 mat...
Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO2 matr...
Abstract. A possible mechanism for the photoemission from Si nanocrystals in an amorphous SiO2 matri...
A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-r...
A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion imp...
A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion imp...
The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Phot...
In this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implan...
In this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implan...
In this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implan...
Si nanoclusters were formed by Si-28 ion implantation into SiO2 matrix and subsequently annealed at ...
Silicon nanocrystals were prepared by Si+-ion implantation and subsequent annealing of SiO2 films t...
The information of band structure of silicon nanocrystal (nc-Si) embedded in SiO 2 thin films synthe...
AbstractWe present results on the light emission of Si nanocrystals embedded into a SiO2 matrix obta...