Full-Band Monte Carlo Simulation for Metal-Semiconductor Contact with Direct Tunneling Effect

The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by the self-consistent ensemble Monte Carlo method. Two-dimension in real space is considered and irregular tetrahedron distribution is used in k-space. And variable G-scheme is used in the self-scatter...The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by the self-consistent ensemble Monte Carlo method. Two-dimension in real space is considered and irregular tetrahedron distribution is used in k-space. And variable G-scheme is used in the self-scatter...Chinese Institute of Electronics(CIE)、IEEE Beijing Section4Vol.