Add to ORKGThe forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interface traps NMOSFET/SOI in this paper.This simple and accurate experimental method can directly give the interface trap density induced by F-N stressing effect for characterizing the device's reliabi...The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interface traps NMOSFET/SOI in this paper.This simple and accurate experimental method can directly give the interface trap density induced by F-N stressing effect for characterizing the device's reliabi...Chinese Institute of Electronics(CIE)、IEEE Beijing Section4Vol.
Conventional interface characterization techniques, such as charge pumping, cannot be applied to SOI...
Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombinati...
The sensitivity analysis of the back interface trap-induced recombination-generation (R-G) current o...
The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interf...
The forward gated-diode R-G current method was used to monitor the F-N stressing-induced interface t...
Application of the forward gated-diode recombination-generation (R-G) current method in extracting t...
The generation of front and back gate interface and oxide traps due to a hot-carrier-stress in silic...
This peper describes the characterization of the hot carrier-induced interface traps by a forward ga...
A novel combined gated-diode technique for extracting the lateral distribution of interface traps in...
A clear correspondence between the gated-diode generation-recombination (R-G) current and the perfor...
Abstract: In this work, gate dielectric degradation under dynamic Fowler-Nordheim (FN) stress is stu...
Forward gated-diode recombination-generation (R-G) current method for characterizing the lateral lig...
Based on the forward gated diode recombination current, a method for direct characterizing interface...
A correlation between the gated-diode R-G current and the performance degradation of SOI n-channel M...
报道了用新的正向栅控二极管技术分离热载流子应力诱生的SOI-MOSFET界面陷阱和界面电荷的理论和实验研究.理论分析表明:由于正向栅控二极管界面态R-G电流峰的特征,该峰的幅度正比于热载流子应力诱生的...
Conventional interface characterization techniques, such as charge pumping, cannot be applied to SOI...
Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombinati...
The sensitivity analysis of the back interface trap-induced recombination-generation (R-G) current o...
The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interf...
The forward gated-diode R-G current method was used to monitor the F-N stressing-induced interface t...
Application of the forward gated-diode recombination-generation (R-G) current method in extracting t...
The generation of front and back gate interface and oxide traps due to a hot-carrier-stress in silic...
This peper describes the characterization of the hot carrier-induced interface traps by a forward ga...
A novel combined gated-diode technique for extracting the lateral distribution of interface traps in...
A clear correspondence between the gated-diode generation-recombination (R-G) current and the perfor...
Abstract: In this work, gate dielectric degradation under dynamic Fowler-Nordheim (FN) stress is stu...
Forward gated-diode recombination-generation (R-G) current method for characterizing the lateral lig...
Based on the forward gated diode recombination current, a method for direct characterizing interface...
A correlation between the gated-diode R-G current and the performance degradation of SOI n-channel M...
报道了用新的正向栅控二极管技术分离热载流子应力诱生的SOI-MOSFET界面陷阱和界面电荷的理论和实验研究.理论分析表明:由于正向栅控二极管界面态R-G电流峰的特征,该峰的幅度正比于热载流子应力诱生的...
Conventional interface characterization techniques, such as charge pumping, cannot be applied to SOI...
Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombinati...
The sensitivity analysis of the back interface trap-induced recombination-generation (R-G) current o...