The experimental investigation on Stress-Induced Leakage Current under Fowler-Nordheim constant voltage stress

In this investigation,we have presented the StressInduced Leakage Current(SILC) phenomenon in ultrathin gate oxide p-MOSFET under FN high field stress.The SILC in ultrathin gate oxide is proportional to exp(β·E_(ox)).The SILC plot of ln(J_(SILC)) versus Eox is linear.The intercept and slope of th...In this investigation,we have presented the StressInduced Leakage Current(SILC) phenomenon in ultrathin gate oxide p-MOSFET under FN high field stress.The SILC in ultrathin gate oxide is proportional to exp(β·E_(ox)).The SILC plot of ln(J_(SILC)) versus Eox is linear.The intercept and slope of th...Chinese Institute of Electronics(CIE)、IEEE Beijing Section4Vol.