Estimation of Interface Roughness using Tunneling Current in Ultrathin MOSFET

Interface roughness effects on tunneling currentin ultrathin MOS structures are investigatedtheoretically. The roughness at SiO_2/Si interface isdescribed in terms of Gauss distribution.It is shownthat the effects of rough surface on tunneling currentcan not be neglected while tunneling occurs. T...Interface roughness effects on tunneling currentin ultrathin MOS structures are investigatedtheoretically. The roughness at SiO_2/Si interface isdescribed in terms of Gauss distribution.It is shownthat the effects of rough surface on tunneling currentcan not be neglected while tunneling occurs. T...Chinese Institute of Electronics(CIE)、IEEE Beijing Section