Add to ORKGIn this paper, the switching layer thickness and temperature impacts on resistance switching polarity of tantalum oxide (TaOx) based resistive random access memory (RRAM) have been investigated. Our results show that at room temperature unipolar behavior was activated in thick TaOx but failed in thi...IEEE Beijing Section
In order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability betwee...
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on volt...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access me...
This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resi...
An atomistic Monte-Carlo simulator is developed for TaOx-based resistive switching random access mem...
Al/Ta2O5/Pt RRAM cell was successfully demonstrated with stable bipolar switching. Band alignment fo...
A comprehensive physical model on the resistive switching (RS) behaviors of bilayered TaOx-based RS ...
The increasing demand on memory from the next-generation technologies facilitated the pathfinding an...
As one of the potential candidates for next generation non-volatile memory, resistance random access...
In this letter, a reproducible unipolar resistive change memory (RRAM) based on TaOx was successfull...
In this paper, a unipolar resistive change memory (RRAM) based on TaOx has been successfully fabrica...
The impact of switching layer thickness on the resistive memory performance and uniformity has been ...
Memristive switching with digital set and multistep analog reset characteristics were demonstrated i...
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consum...
In this letter, the temperature instability of HfOx-based resistive switching memory is investigated...
In order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability betwee...
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on volt...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access me...
This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resi...
An atomistic Monte-Carlo simulator is developed for TaOx-based resistive switching random access mem...
Al/Ta2O5/Pt RRAM cell was successfully demonstrated with stable bipolar switching. Band alignment fo...
A comprehensive physical model on the resistive switching (RS) behaviors of bilayered TaOx-based RS ...
The increasing demand on memory from the next-generation technologies facilitated the pathfinding an...
As one of the potential candidates for next generation non-volatile memory, resistance random access...
In this letter, a reproducible unipolar resistive change memory (RRAM) based on TaOx was successfull...
In this paper, a unipolar resistive change memory (RRAM) based on TaOx has been successfully fabrica...
The impact of switching layer thickness on the resistive memory performance and uniformity has been ...
Memristive switching with digital set and multistep analog reset characteristics were demonstrated i...
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consum...
In this letter, the temperature instability of HfOx-based resistive switching memory is investigated...
In order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability betwee...
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on volt...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access me...