Add to ORKGMultilevel RRAM array is one of the most promising candidates of next generation high density memory technology.In this paper,we investigate the size limitation of multilevel 1D1R RRAM array based on circuit simulation.Optimization of device characteristics and operation mode is obtained to increase...IEEE Beijing Section
A SPICE model of oxide-based resistive random access memory (RRAM) for dc and transient behaviors is...
Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the po...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Multilevel RRAM array is one of the most promising candidates of next generation high density memory...
The resistive random access memory (RRAM) crossbar array has been extensively studied as one of the ...
Oxide-based resistive random access memory(RRAM) has been widely studied as the promising candidate ...
RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatib...
In this work, a comprehensive analysis is performed to study the speed-power performance of one sele...
Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability an...
We investigate the key factors for scalable high density MRAM. Specifically we examine problems such...
A methodology to analyze device-to-circuit characteristics and predict memory array performance is p...
Modeling of resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the exigent n...
A methodology to analyze device-to-circuit characteristics and predict memory array performance is p...
Integrating molecular memory devices into large scale arrays is a key requirement for translating th...
Leakage current suppression ability of threshold switching selectors is important for the high-densi...
A SPICE model of oxide-based resistive random access memory (RRAM) for dc and transient behaviors is...
Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the po...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Multilevel RRAM array is one of the most promising candidates of next generation high density memory...
The resistive random access memory (RRAM) crossbar array has been extensively studied as one of the ...
Oxide-based resistive random access memory(RRAM) has been widely studied as the promising candidate ...
RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatib...
In this work, a comprehensive analysis is performed to study the speed-power performance of one sele...
Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability an...
We investigate the key factors for scalable high density MRAM. Specifically we examine problems such...
A methodology to analyze device-to-circuit characteristics and predict memory array performance is p...
Modeling of resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the exigent n...
A methodology to analyze device-to-circuit characteristics and predict memory array performance is p...
Integrating molecular memory devices into large scale arrays is a key requirement for translating th...
Leakage current suppression ability of threshold switching selectors is important for the high-densi...
A SPICE model of oxide-based resistive random access memory (RRAM) for dc and transient behaviors is...
Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the po...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...