Add to ORKGThis paper reports channel length-dependent parasitic bipolar transistor(PBT)effect in Poly-Si TFTs considering traps at grain boundary.As verified by the experimentally measured data and simulation results, due to impact ionization(Ⅱ),the PBT's current gain is large when the channel length is small...IEEE Beijing Section
This paper analyzes impact ionization phenomena in advanced polysilicon emitter bipolar transistors....
This paper analyzes impact ionization phenomena in advanced polysilicon emitter bipolar transistors....
Device degradation of solution based metal-induced laterally crystallized (MILC) p-type poly-Si thin...
This letter reports the floating-body kink-effectrelated parasitic bipolar transistor (PBT) behavior...
This paper presents the behavior of grain boundary-related kink effect in poly-si TFTs. As verified ...
This paper presents the behavior of grain boundary -related kink effect in poly-si TFTs. As verified...
145-148Carrier transport through transverse and longitudinal grain boundaries (GBs) in polysilicon t...
with a single grain boundary (GB) present in the channel, is simu-lated using two–dimensional numeri...
Numerical simulations of grain boundaries barriers and drain current are carried out in polysilicon ...
A simple physical model is developed to describe the parasitic bipolar transistor effect when poly s...
The effects of geometrical parameters on the electrical characteristics of network-channel low-tempe...
Abstract-A physical model considering the effects of grain bound-aries on the turn-on behavior of po...
[[abstract]]A two-dimensional model with grain boundary traps for polycrystalline silicon is used in...
In order to achieve both driver and display capability for a number of display devices, TFT has attr...
Abstract: In this paper, we investigated an anomalous hump phenomenon under the positive bias stres...
This paper analyzes impact ionization phenomena in advanced polysilicon emitter bipolar transistors....
This paper analyzes impact ionization phenomena in advanced polysilicon emitter bipolar transistors....
Device degradation of solution based metal-induced laterally crystallized (MILC) p-type poly-Si thin...
This letter reports the floating-body kink-effectrelated parasitic bipolar transistor (PBT) behavior...
This paper presents the behavior of grain boundary-related kink effect in poly-si TFTs. As verified ...
This paper presents the behavior of grain boundary -related kink effect in poly-si TFTs. As verified...
145-148Carrier transport through transverse and longitudinal grain boundaries (GBs) in polysilicon t...
with a single grain boundary (GB) present in the channel, is simu-lated using two–dimensional numeri...
Numerical simulations of grain boundaries barriers and drain current are carried out in polysilicon ...
A simple physical model is developed to describe the parasitic bipolar transistor effect when poly s...
The effects of geometrical parameters on the electrical characteristics of network-channel low-tempe...
Abstract-A physical model considering the effects of grain bound-aries on the turn-on behavior of po...
[[abstract]]A two-dimensional model with grain boundary traps for polycrystalline silicon is used in...
In order to achieve both driver and display capability for a number of display devices, TFT has attr...
Abstract: In this paper, we investigated an anomalous hump phenomenon under the positive bias stres...
This paper analyzes impact ionization phenomena in advanced polysilicon emitter bipolar transistors....
This paper analyzes impact ionization phenomena in advanced polysilicon emitter bipolar transistors....
Device degradation of solution based metal-induced laterally crystallized (MILC) p-type poly-Si thin...