Add to ORKGThe bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated in this paper.Two classical bias modes (Vg@Isubmax and Vg=Vd)were applied to analyze the CHC degradation behavior of SOI pMOSFETs.The results show that at low Vg,hot carriers injection produced by impa...IEEE Beijing Section
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
International audienceThe hot carrier (HC) reliability has been investigated in MOSFETs with ultra-t...
The bias dependence of Channel Hot Carrier (CHC) degradation in 0.18 mu m SOT pMOSFETs is investigat...
\u3cp\u3ePMOSFET hot-carrier reliability is often proposed to be limited by negative oxide charge. W...
In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a function of ga...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
session posterInternational audienceThe HC degradation of nanoscale FD-SOI n-MOSFETs has been invest...
session posterInternational audienceThe HC degradation of nanoscale FD-SOI n-MOSFETs has been invest...
\u3cp\u3eHot-carrier degradation is mainly caused by negative oxide-charge generation in the present...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
Abstract: A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-chan...
Abstract — In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a fun...
A unified understanding on fully-depleted SOI (FDSOI) N-Channel MOSFET hot-carrier degradation is pr...
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
International audienceThe hot carrier (HC) reliability has been investigated in MOSFETs with ultra-t...
The bias dependence of Channel Hot Carrier (CHC) degradation in 0.18 mu m SOT pMOSFETs is investigat...
\u3cp\u3ePMOSFET hot-carrier reliability is often proposed to be limited by negative oxide charge. W...
In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a function of ga...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
session posterInternational audienceThe HC degradation of nanoscale FD-SOI n-MOSFETs has been invest...
session posterInternational audienceThe HC degradation of nanoscale FD-SOI n-MOSFETs has been invest...
\u3cp\u3eHot-carrier degradation is mainly caused by negative oxide-charge generation in the present...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
Abstract: A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-chan...
Abstract — In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a fun...
A unified understanding on fully-depleted SOI (FDSOI) N-Channel MOSFET hot-carrier degradation is pr...
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
Hot-Carrier degradation in p-channel MOSFET's is investigated comparing Hydrogen (H2) and Deuterium ...
International audienceThe hot carrier (HC) reliability has been investigated in MOSFETs with ultra-t...