Add to ORKGA 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano scale semiconductor devices especially for the non planar structures.The transition rates for the various scattering processes including phonon scattering,ionized impurity scattering,remote coulomb scat...IEEE Beijing Section
In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through...
Eere we report on the development of a new parallel, scalable and portable 3D f ~ t e element power ...
A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the qu...
92 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.A full-band 3D Monte Carlo sem...
We developed a 3D parallel full band Monte Carlo simulator for semiconductor devices. This enables u...
3D paralleled electro-thermal coupled full band ensemble MC simulation platform is developed for ana...
We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Mont...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
This work presents a study of the applicability of a massively parallel computing paradigm to Monte ...
. This paper describes two implementations of a semiconductor device simulator on two different arc...
This paper discusses the various hierarchy levels that are possible when the full band structure is ...
We use Intel Xeon Phi Many Integrated Core (MIC) to accelerate our 3D full band self-consistent ense...
We use Intel Xeon Phi Many Integrated Core (MIC) to accelerate our 3D full band self-consistent ense...
In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through...
Eere we report on the development of a new parallel, scalable and portable 3D f ~ t e element power ...
A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the qu...
92 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.A full-band 3D Monte Carlo sem...
We developed a 3D parallel full band Monte Carlo simulator for semiconductor devices. This enables u...
3D paralleled electro-thermal coupled full band ensemble MC simulation platform is developed for ana...
We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Mont...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
This work presents a study of the applicability of a massively parallel computing paradigm to Monte ...
. This paper describes two implementations of a semiconductor device simulator on two different arc...
This paper discusses the various hierarchy levels that are possible when the full band structure is ...
We use Intel Xeon Phi Many Integrated Core (MIC) to accelerate our 3D full band self-consistent ense...
We use Intel Xeon Phi Many Integrated Core (MIC) to accelerate our 3D full band self-consistent ense...
In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through...
Eere we report on the development of a new parallel, scalable and portable 3D f ~ t e element power ...
A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the qu...