Add to ORKGAs devices scaling down into nanometer region,the random telegraph noise(RTN)has become a significant issue for device variability and reliability,which has been extensively studied at DC conditions and recently also at AC conditions.The nonradiative multiphonon(NMP) theory has been introduced to de...IEEE Beijing Section
In this paper, an improved "hole in the inversion layer" (HIL) model for amplitude of rand...
Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFET...
Abstract: In this paper, we delve into one of the most relevant defects-related phenomena causing f...
As devices scaling down into nanometer region, the random telegraph noise (RTN) has become a signifi...
This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale ...
Since devices actually operate under AC signals in digital circuits, it is more informative to study...
In this paper, the amplitude (Delta I-d/I-d) distribution of random telegraph noise (RTN) induced by...
Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
In his famous lecture [1], Feynman said "There's plenty of room at the bottom", which...
This paper presents a thorough statistical investigation of random telegraph noise (RTN) and bias te...
In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decanan...
International audienceIn this work, we present our latest modeling approaches regarding low-frequenc...
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise...
In this paper, an improved "hole in the inversion layer" (HIL) model for amplitude of rand...
Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFET...
Abstract: In this paper, we delve into one of the most relevant defects-related phenomena causing f...
As devices scaling down into nanometer region, the random telegraph noise (RTN) has become a signifi...
This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale ...
Since devices actually operate under AC signals in digital circuits, it is more informative to study...
In this paper, the amplitude (Delta I-d/I-d) distribution of random telegraph noise (RTN) induced by...
Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
In his famous lecture [1], Feynman said "There's plenty of room at the bottom", which...
This paper presents a thorough statistical investigation of random telegraph noise (RTN) and bias te...
In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decanan...
International audienceIn this work, we present our latest modeling approaches regarding low-frequenc...
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise...
In this paper, an improved "hole in the inversion layer" (HIL) model for amplitude of rand...
Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFET...
Abstract: In this paper, we delve into one of the most relevant defects-related phenomena causing f...