Add to ORKGScaling down of conventional flash memory technology faces difficult technical challenges and some physical limitations.Novel silicon-based flash cell structures were presented in this paper as possible solutions.A novel cell structure using dual doping polysilicon(PNP) as the floating gate is pr...Chinese Institute of Electronics（CIE）
Opposite side floating gate SOI FLASH memory cell has been proposed for advanced device scaling. The...
Non-volatile memory is an important part in low-power portable electronics such as PDA, mobile phone...
International audienceThis chapter presents an overview of the charge trap, silicon nanocrystals and...
Scaling down of conventional flash memory technology faces difficult technical challenges and some p...
The flash memory technology meets physical and technical obstacles for further scaling. New structur...
The flash memory technology meets physical and technical obstacles for further scaling. New structur...
The flash memory technology meets physical and technical obstacles in further scaling. New structure...
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
A novel flash memory cell based on Tunneling Field Effect Transistor (TFET) is investigated via 2-D ...
In this paper, a novel flash memory cell structure with the floating gate shaped like the Roman numb...
[[abstract]]In the design of either n-channel or p-channel flash memory, a conventional n-type poly-...
Opposite side floating gate SOI FLASH memory cell has been proposed for advanced device scaling. The...
Non-volatile memory is an important part in low-power portable electronics such as PDA, mobile phone...
International audienceThis chapter presents an overview of the charge trap, silicon nanocrystals and...
Scaling down of conventional flash memory technology faces difficult technical challenges and some p...
The flash memory technology meets physical and technical obstacles for further scaling. New structur...
The flash memory technology meets physical and technical obstacles for further scaling. New structur...
The flash memory technology meets physical and technical obstacles in further scaling. New structure...
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
A novel flash memory cell based on Tunneling Field Effect Transistor (TFET) is investigated via 2-D ...
In this paper, a novel flash memory cell structure with the floating gate shaped like the Roman numb...
[[abstract]]In the design of either n-channel or p-channel flash memory, a conventional n-type poly-...
Opposite side floating gate SOI FLASH memory cell has been proposed for advanced device scaling. The...
Non-volatile memory is an important part in low-power portable electronics such as PDA, mobile phone...
International audienceThis chapter presents an overview of the charge trap, silicon nanocrystals and...