Efficiency droop suppression of InGaN-based blue light-emitting diodes using dip-shaped quantum wells

The InGaN-based blue light-emitting diodes (LEDs) with dip-shaped quantum wells (QWs) and conventional QWs were fabricated by MOVPE. The performances of fabricated InGaN-based LEDs were investigated experimentally and analyzed theoretically. The results reveal that the efficiency droop of InGaN-based LED is suppressed by using dip-shaped QWs structure. Firstly, the dip-shaped QWs LED has higher emission intensity compared with the conventional QWs LED due to the stronger quantum confinement and weaker polarization effect. Furthermore, the effective combination region in dip-shaped QWs does not reduce obviously which decrease will lead to efficiency droop aggravation. As a result, the efficiency droop at 50 Acm(-2) injection current for dip-shaped QWs LED reduce from 59% for conventional QWs LED to 48%. So, the dip-shaped QWs can be used to suppress the efficiency droop of InGaN-based LEDs. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimNational High Technology Research and Development Program of China [2014AA032605]; National Natural Science Foundation of China [61204054, 61376012, 61272507, 61275052]; China Postdoctoral Science Foundation [2015M570933]; Beijing Natural Science Foundation [4152035]; Major Science and Technology Project of Guangdong, China [2014B010120004]SCI(E)EIARTICLEtongjun@pku.edu.cn51187-119221