Add to ORKGA simple a-Si TFT integrated gate driver on array which can work at low temperature is proposed and studied The circuit features a capacitor coupling gate bias at the TFT for suppressing feed-through effect The bias allows the circuit output a well-formed waveform even at low temperature. ? 2015 SID.EIBook 31316-13194
A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed i...
In a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to...
Low temperature polysilicon thin film transistors (Poly-Si TFT) have recently been used to design in...
A hydrogenated amorphous silicon (a-Si: H) thin-film transistor (TFT) gate driver on array with low-...
An integrated a-Si: H thin-film transistors (TFTs) gate driver on array with both forward and backwa...
MasterIntegrating gate driver circuits simultaneously with pixel TFTs on the glass is very important...
A high reliable amorphous silicon gate driver with shared dual pull-down units is proposed and fabri...
An integrated five-transistor/one-capacitor approach for realizing a a-Si:H thin-film transistor (TF...
This paper presents a kind of new integrated hydrogenated amorphous silicon thin film transistor (a-...
The driving transistor in a-Si:H gate driver circuits is studied systematically for the first time. ...
International audienceAbstract Low temperature unhydrogenated polysilicon thin film transistors are ...
The very low photon backgrounds to be achieved by future cryogenic astronomical telescopes present t...
In this paper, we propose a new integrated hydrogenated amorphous silicon (a-Si: H) thin-film transi...
Background In recent years, gate driver using amorphous silicon (a-Si) technology for the TFT-LCD h...
A thorough study on the gate driver integrated with hydrogenated amorphous-silicon thin-film transis...
A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed i...
In a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to...
Low temperature polysilicon thin film transistors (Poly-Si TFT) have recently been used to design in...
A hydrogenated amorphous silicon (a-Si: H) thin-film transistor (TFT) gate driver on array with low-...
An integrated a-Si: H thin-film transistors (TFTs) gate driver on array with both forward and backwa...
MasterIntegrating gate driver circuits simultaneously with pixel TFTs on the glass is very important...
A high reliable amorphous silicon gate driver with shared dual pull-down units is proposed and fabri...
An integrated five-transistor/one-capacitor approach for realizing a a-Si:H thin-film transistor (TF...
This paper presents a kind of new integrated hydrogenated amorphous silicon thin film transistor (a-...
The driving transistor in a-Si:H gate driver circuits is studied systematically for the first time. ...
International audienceAbstract Low temperature unhydrogenated polysilicon thin film transistors are ...
The very low photon backgrounds to be achieved by future cryogenic astronomical telescopes present t...
In this paper, we propose a new integrated hydrogenated amorphous silicon (a-Si: H) thin-film transi...
Background In recent years, gate driver using amorphous silicon (a-Si) technology for the TFT-LCD h...
A thorough study on the gate driver integrated with hydrogenated amorphous-silicon thin-film transis...
A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed i...
In a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to...
Low temperature polysilicon thin film transistors (Poly-Si TFT) have recently been used to design in...