Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.NSFC [61421005, 61334007]; Beijing Municipal Science and Technology Plan Projects; Stanford Non-Volatile Memory Technology Research Initiative (NMTRI) affiliate program; Systems on Nanoscale Information Fabrics (SONIC) Center, Semiconductor Technology Advanced Research Network (STARnet), a Semiconductor Research Corporation (SRC) program - Microelectronics Advanced Research Corporation (MARCO); Defense Advanced Research Projects Agency (DARPA); NCN-NEEDS program; National Science Foundation [1227020-EEC]; Semiconductor Research CorporationSCI(E)EIPubMedARTICLEphwang@pku.edu.cn; kangjf@pku.edu.cn212152042