In the first three quarters of 2013, semiconductor industry witnessed a great multiplication of 12-inch TSV wafers mounting to 1 million plus scale. Despite this increasing popularity, TSV technology suffers from high cost due to yield loss caused by process defects. Poor insulation and connectivity are the major problems for TSV and RDL(Re-Distribution Line) structures. Without a cost-effective test system and methodology, the faulty TSVs may be stacked onto good ones and therefore bring forth an increasing chip cost. In this paper, the leakage current and pathway resistance are characterized for TSV and RDL structures, and a two-step in-line test methodology was proposed to pinpoint these defects and screen out KGDs (Known Good Dies) on t...
Defects in TSV will lead to variations in the propagation delay of the net connected to the faulty T...
built-in self test integrated circuit testing three-dimensional integrated circuitsThrough Silicon V...
An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is cho...
In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabric...
Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in ...
The yield of 3D stacked IC manufacturing improves with the pre-bond integrity testing of through sil...
As the traditional IC design migrates to three-dimensional integrated circuits (3D-ICs) design, new ...
The TSV(Through-Silicon Via) plays an important role of inter-layer interconnection in 3D ICs. Howev...
Through Silicon Via (TSV) is a hot topic in today’s 3D Integrated Circuit. In order for TSV to be us...
Through silicon via (TSV) offers a promising solution for the vertical connection of chip I/O, which...
Through-silicon vias (TSVs) are critical elements in 3-D integrated circuits susceptible to defects ...
Through Silicon Vias (TSVs) are the transmission lines between different bonding layers and are indi...
© 2004-2012 IEEE. This paper presents a built-in self test (BIST) methodology, architecture and circ...
The pre-bond through silicon via(TSV) probing tests and fault localization are important for yield a...
Abstract—Testing for three dimensional (3D) integrated cir-cuits (ICs) based on through-silicon-via ...
Defects in TSV will lead to variations in the propagation delay of the net connected to the faulty T...
built-in self test integrated circuit testing three-dimensional integrated circuitsThrough Silicon V...
An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is cho...
In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabric...
Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in ...
The yield of 3D stacked IC manufacturing improves with the pre-bond integrity testing of through sil...
As the traditional IC design migrates to three-dimensional integrated circuits (3D-ICs) design, new ...
The TSV(Through-Silicon Via) plays an important role of inter-layer interconnection in 3D ICs. Howev...
Through Silicon Via (TSV) is a hot topic in today’s 3D Integrated Circuit. In order for TSV to be us...
Through silicon via (TSV) offers a promising solution for the vertical connection of chip I/O, which...
Through-silicon vias (TSVs) are critical elements in 3-D integrated circuits susceptible to defects ...
Through Silicon Vias (TSVs) are the transmission lines between different bonding layers and are indi...
© 2004-2012 IEEE. This paper presents a built-in self test (BIST) methodology, architecture and circ...
The pre-bond through silicon via(TSV) probing tests and fault localization are important for yield a...
Abstract—Testing for three dimensional (3D) integrated cir-cuits (ICs) based on through-silicon-via ...
Defects in TSV will lead to variations in the propagation delay of the net connected to the faulty T...
built-in self test integrated circuit testing three-dimensional integrated circuitsThrough Silicon V...
An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is cho...