This paper reports a silicon-silicon anodic bonding process based on embedded glass. We successfully embedded glass into patterned silicon groove by fusion treatment and bonded it with another silicon wafer by anodic bonding process. This process realizes the precise control of bonding pattern and the depth of the bonding gap without electrical connection between two silicon wafers. Tension test result shows that the bonding strength is over 7MPa - which is in accordance with normal anodic bonding process, so that the process can be used in a wide range of MEMS devices design. ? 2015 IEEE.EI470-47
[[abstract]]Anodic bonding technique is important and is often used in package of MEMS components. I...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
Wafer bonding is an enabling technology in substrate engineering, MEMS manufacturing and packaging a...
The article deals with a novel laboratory anodic bonding device. This device is used for MEMS creati...
AbstractWe described the glass-to-glass anodic bonding through thin p-Si layer. The applied here p-S...
The article deals with a novel laboratory anodic bonding device. This device is used for MEMS creati...
By MEMS packaging test platform for bonding process of bonding temperature and bonding time,and test...
This paper reports a novel method of anodic bonding with 3 intermedia layers, silicon carbide, tungs...
Glass-to-glass wafer bonding has recently attracted considerable interest. Especially for liquid man...
Glass-to-glass wafer bonding has recently attracted considerable interest. Especially for liquid man...
This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bon...
A new, nondestructive anodic bonding test has been designed. One main factor involved in the anodic ...
We report here on the results of experiments concerning particular bonding processes potentially use...
This paper examines the process of anodic bonding with regard to the fabrication of silicon-glass ca...
[[abstract]]Anodic bonding technique is important and is often used in package of MEMS components. I...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
Wafer bonding is an enabling technology in substrate engineering, MEMS manufacturing and packaging a...
The article deals with a novel laboratory anodic bonding device. This device is used for MEMS creati...
AbstractWe described the glass-to-glass anodic bonding through thin p-Si layer. The applied here p-S...
The article deals with a novel laboratory anodic bonding device. This device is used for MEMS creati...
By MEMS packaging test platform for bonding process of bonding temperature and bonding time,and test...
This paper reports a novel method of anodic bonding with 3 intermedia layers, silicon carbide, tungs...
Glass-to-glass wafer bonding has recently attracted considerable interest. Especially for liquid man...
Glass-to-glass wafer bonding has recently attracted considerable interest. Especially for liquid man...
This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bon...
A new, nondestructive anodic bonding test has been designed. One main factor involved in the anodic ...
We report here on the results of experiments concerning particular bonding processes potentially use...
This paper examines the process of anodic bonding with regard to the fabrication of silicon-glass ca...
[[abstract]]Anodic bonding technique is important and is often used in package of MEMS components. I...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...