Graphene exhibits exciting potentials for high-speed wideband photodetection and high quantum efficiency solar energy harvest because of its broad spectral absorption, fast photoelectric response, and potential carrier multiplication. Although photocurrent can be generated near a metal-graphene interface in lateral devices, the photoactive area is usually limited to a tiny one-dimensional line-like interface region. Here, we report photoelectric devices based on vertical graphene two-dimensional homojunction, which is fabricated via vertically stacking four graphene monolayers with asymmetric metal contacts. The devices show excellent photovoltaic output with excitation wavelength ranging from visible light to mid-infrared. The wavelength d...
Graphene has been considered as an attractive material for optoelectronic applications such as photo...
Graphene has been considered as an attractive material for optoelectronic applications such as photo...
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer ...
Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, ...
Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, ...
Graphene, with ultra-high carrier mobility and short photocarrier lifetime, has shown remarkable pot...
© 2020 American Chemical Society. Graphene is one of the most promising materials for photodetectors...
The isolation of various two-dimensional (2D) materials, and the possibility to combine them in vert...
Graphene with ultra-high carrier mobility and ultra-short photoresponse time has shown remarkable po...
The isolation of various two-dimensional (2D) materials, and the possibility to combine them in vert...
Since graphene has been a popular topic in recent years, we decide to explore its function as a high...
A demonstration is presented of how significant improvements in all‐2D photodetectors can be achieve...
This article reviews optoelectronic devices based on graphene and related two-dimensional (2D) mater...
We show that reducing the degree of van der Waals overlapping in all 2D ultrathin lateral devices co...
Graphene has been one of the most extensively studied materials due to its unique band structure, th...
Graphene has been considered as an attractive material for optoelectronic applications such as photo...
Graphene has been considered as an attractive material for optoelectronic applications such as photo...
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer ...
Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, ...
Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, ...
Graphene, with ultra-high carrier mobility and short photocarrier lifetime, has shown remarkable pot...
© 2020 American Chemical Society. Graphene is one of the most promising materials for photodetectors...
The isolation of various two-dimensional (2D) materials, and the possibility to combine them in vert...
Graphene with ultra-high carrier mobility and ultra-short photoresponse time has shown remarkable po...
The isolation of various two-dimensional (2D) materials, and the possibility to combine them in vert...
Since graphene has been a popular topic in recent years, we decide to explore its function as a high...
A demonstration is presented of how significant improvements in all‐2D photodetectors can be achieve...
This article reviews optoelectronic devices based on graphene and related two-dimensional (2D) mater...
We show that reducing the degree of van der Waals overlapping in all 2D ultrathin lateral devices co...
Graphene has been one of the most extensively studied materials due to its unique band structure, th...
Graphene has been considered as an attractive material for optoelectronic applications such as photo...
Graphene has been considered as an attractive material for optoelectronic applications such as photo...
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer ...