Numerical simulation study on chemical reaction-transport process of AlN MOCVD growth

针对垂直转盘式MOCVD反应器生长A1N的化学反应-输运过程进行数值模拟研究,特别探讨了反应室高度、操作压强和加合物衍生的三聚物对AIN生长的化学反应路径的影响。研究结果表明,AIN在MOCVD生长中以AI (CH_3)_3和NH_3的加合路径为主,Al(CH_3)_3的热解路径很弱;加合路径衍生的二聚物是薄膜生长的主要前体,三聚物是纳米粒子的主要前体;降低反应室高度,寄生反应减弱,热解路径加强,使生长速率增大;增大压强,寄生反应加剧,使生长速率下降;添加由三聚物参加的表面反应后,生长速率提高了近4倍,证明三聚物不参加薄膜生长,只是提供纳米粒子前体。The numerical simulation study on the chemistry-transport process for the growth of AlN in a rotating disc MOCVD reactor has been carried out. The effects of the reactor height, pressure and the adduct-derived trimer on the growth of AlN chemical reactions are particularly investigated. The results show that the reaction pathway of AlN MOCVD growth is dominated by the adduct formation path of Al(CH3)3 and NH3, and the pyrolysis of Al(CH3)3 is weak. The adduct-derived dimer is the main film precursor; the trimer is the main precursor for nanoparticles. Lowering the reactor height can reduce the parasitic reaction, enhance the pyrolysis and increase the growth rate. Increasing the pressure can increase the parasitic reaction and reduce the growth rate. By adding the trimer contribution for the film growth, the growth rate increases nearly 4 times which verifies that the trimer does not contribute to the film growth, but only provides the nanoparticles.国家自然科学基金,国家重点基础研究发展计划(973计划)EI中文核心期刊要目总览(PKU)中国科技核心期刊(ISTIC)中国科学引文数据库(CSCD)51179-11854