A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

A compact model for tunneling field-effect-transistors (TFETs) is presented. The model includes a band-to-band tunneling (BTBT) current module and a terminal charge module. TCAD simulations show that the model describes TFETs currents and capacitances accurately. The model is implemented into a circuit simulator and used to simulate TFETs logic circuits and SRAMs. Unique features in TEFTs including large overshoot during switching, long delay and uni-directional conduction are demonstrated. ? 2012 IEEE.EI