Dielectric properties of BaTiO3 ceramics doped with Gd and Sn

Gd and Sn doped BaTiO3 ceramics were prepared with raw materials BaCO3, TiO2, SnO2(gt; 99%) and Gd2O3(> 99.99%) using standard solid-state reaction method. The dielectric constant and dielectric loss of samples were measured as a function of temperature and frequency. The results show that the effect of Gd and Sn doping is to increase the dielectric constant and to reduce the Curie temperature. BaTiO3 ceramics doped with 3% Gd and 10% Sn have a dielectric constant of 54000 which is much larger than that of the parent material (10000). The new material may be used for manufacturing small size capacitors with large capacity or positive temperature devices etc.EI091389-13913