Effects of reverse substrate bias on the endurance degradation of FLASH memory devices

The effects of reverse substrate bias on the endurance degradation of ETOXTM FLASH memory devices under the stress mode VFGVD/2 are investigated. The results indicate that as the reverse substrate bias increases the injection efficiency, the endurance degradation of the device is minimized under certain reverse substrate bias. Taking both the device endurance degradation and the injection efficiency into account, a FLASH memory device with optimal reverse substrate bias under the stress mode VFGVD/2 is obtained with the minimum endurance degradation and the greatest injection efficiency.EI061115-11192