Design of a 3.1-10.6 GHz ultra wideband low noise amplifier

A 3.1-10.6 GHz ultra wideband LNA was designed using standard 0.35 ??m SiGe HBT process. The simulation result shows that, with careful selection of circuits structure and device parameters, it is possible to fabricate a UWB LNA using standard 0.35 ??m SiGe HBT process. In the designed band, the S11 and S22 of the designed LNA is better than - 8 dB, and the S21 is about 11 dB with supply voltage of 2.5 V and draws a current of 4.38 mA, and the noise figure of the LNA is 3.5 dB.EI0178-814