High surface hole concentration p-type GaN using Mg implantation

Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 ?? 1017 cm-3)n conformed by Van der pauw Hall measurement after annealing at 800 ??C for 1 h. This is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration.EI05701-7043