Direct tunneling effect in metal-semiconductor contacts simulated with Monte Carlo method

Considering the tunneling effect and the Schottky effect, the metal-semiconductor contact is simulated by self-consistent ensemble Monte Carlo method. For different biases or different barrier heights, the investigation of the tunneling current indicates that the tunneling effect is of great importance for reverse biases. The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one. The barrier lowering effects on the current transport at the metal-semiconductor interface.EI0111364-13682