Topics
double diffusionDisease
electric fieldMilitary unit
breakdown voltageLocomotive
semiconductor deviceOrganisation
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numerical analysisMusic genre
An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor was proposed. Based on the 2-D Poisson's equation solution, the derived model gives the closed form solutions of the surface potential and electric field distribution as a function of the structure parameters and drain bias. A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance was presented to serve for quantifying the maximum breakdown voltage and optimal relations of all design parameters. Analytical results are in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data...
[[abstract]]By solving 2-D Poisson’s equation, a new analytical model to calculate the electric fiel...
Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective later...
[[abstract]]An optimal variation in lateral doping profiles is proposed for the drift region of late...
提出了RESURF LDMOS功率器件的表面电场分布和击穿电压的解析模型.根据二维泊松方程的求解,得到了与器件参数和偏压相关的表面电场和电势分布解析表达式.在此基础上,推出了为获得击穿电压和比导通电阻...
A quasi-2-D analytical model of the surface electrical field distribution and optimization of the RE...
A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESUR...
A linearly graded doping drift region structure, a novel lateral voltage-sustained layer used for im...
A new analytical model for the surface field distribution and optimization of thin film silicon-on-i...
In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of ...
[[abstract]]By solving the 2D Poisson's equation, analytical models are proposed to calculate the su...
[[abstract]]This thesis presents a method to optimize integrated LDMOS transistors for use in on-res...
The LDMOST is a common power device in HVIC's that is normally fabricated using the RESURF prin...
This paper introduces a technology-specific relation for the static performance of high voltage late...
[[abstract]]In this paper a new approach of obtaining the electrical properties of the power lateral...
A simple expression explicitly relating the surface potential to the surface electric field of a sym...
[[abstract]]By solving 2-D Poisson’s equation, a new analytical model to calculate the electric fiel...
Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective later...
[[abstract]]An optimal variation in lateral doping profiles is proposed for the drift region of late...
提出了RESURF LDMOS功率器件的表面电场分布和击穿电压的解析模型.根据二维泊松方程的求解,得到了与器件参数和偏压相关的表面电场和电势分布解析表达式.在此基础上,推出了为获得击穿电压和比导通电阻...
A quasi-2-D analytical model of the surface electrical field distribution and optimization of the RE...
A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESUR...
A linearly graded doping drift region structure, a novel lateral voltage-sustained layer used for im...
A new analytical model for the surface field distribution and optimization of thin film silicon-on-i...
In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of ...
[[abstract]]By solving the 2D Poisson's equation, analytical models are proposed to calculate the su...
[[abstract]]This thesis presents a method to optimize integrated LDMOS transistors for use in on-res...
The LDMOST is a common power device in HVIC's that is normally fabricated using the RESURF prin...
This paper introduces a technology-specific relation for the static performance of high voltage late...
[[abstract]]In this paper a new approach of obtaining the electrical properties of the power lateral...
A simple expression explicitly relating the surface potential to the surface electric field of a sym...
[[abstract]]By solving 2-D Poisson’s equation, a new analytical model to calculate the electric fiel...
Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective later...
[[abstract]]An optimal variation in lateral doping profiles is proposed for the drift region of late...
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